Picture of LPCVD furnace, B2 TEOS
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Centrotherm E1200 HT 260-4 B-stack is used to process IC-clean silicon wafers either with reactive or inert gases. The process is chemical vapour deposition (CVD) of  TEOS.

Supported wafer diameter is 100 and 150 mm and thickness from 200 – 1300 nm.

Tool name:
LPCVD furnace, B2 TEOS
Area/room:
M1 D Diffusion
Category:
Furnace Processes
Manufacturer:
Centrotherm
Model:
E1200 HT 260-4

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