Picture of Oxide ICP etcher STS AOE
Current status:
AVAILABLE
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
Process:
You must be logged in to view files.

The tool is designed to etch mainly different qualities of silicon dioxide on 4”, 6” and 8”. The tool is also suitable for etching any etchable material with fluorine chemistry. Etch rate is mainly 300-500 nm/min for 4” and slightly lower for larger wafers. The uniformity over a wafer is usually ±1 %, but mask etch rate may very more over wafer. Repeatability has also proved good, as anticipated for high bias oxide etching.

Tool name:
Oxide ICP etcher STS AOE
Area/room:
M2 F10 Plasma
Category:
Dry etching
Manufacturer:
STS
Model:
AOE

Instructors

Licensed Users

You must be logged in to view tool modes.