Year of Manufacture and Installation:
2014-2015 / 2014-2015
Programmable process tube for P- and B- diffusion (and dry oxidation) of silicon wafers. Wafers up to 200mm can be processed. (At the moment there are boats for 100 mm and 156x156 mm wafers.) A semiautomated system with manual sample introduction. Automated process. Resistance coil heating in 3 zones. Up to 60 wafers can be processed in one run. Tube used for both gas-source diffusion and spin-on source diffusion.
Key Features and Accessories:
Available process gases: N2, O2, Bubbler TRANS-LC (trans 1,2-Dichloroethen), Bubbler POCL3. Operating temperature from +500 °C to +950 °C.
Sheet resistance resulting from diffusion controlled by diffusion temperature and diffusion time.
100mm and 156x156 mm (up to 200 mm)
RCA1 cleaned silicon substrate (cleaned in F11 RCA1 bath with DCTA and handled with clean plastic tweezers after cleaning) with or without spin-on boron or phosphorous.
Other substrates than silicon. Not RCA1 cleaned silicon substrate. Metal or other “dirty” film on silicon. Silicon substrate handled with metal tweezers.
Availability and Cost:
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