Picture of ICP-RIE Plasmalab 100
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http://micronova.fi/nanofab/equipment/dryetching/icplasmaecher.html

Description:

Inductively coupled plasma etcher for etching silicon, compound semiconductors and polymers.

Key Features and Accessories:

Two power sources: ICP source 2kW, CCP source 300W. Available etch gases: BCl3, Cl2, SiCl4, SF6, H2 and O2/N2/Ar. Operating temperature from -150 °C to +400 °C.

Key Specifications:

• Silicon etch rate up to 8 µm/min possible. Typically 2-3 µm/min. 
• Typical etch rate for GaN 600 nm/min 
• Typical etch rate for GaAs 2 µm/min 
• Typical etch rate for InP 2 µm/min

Substrate Size:

100 mm wafer. Smaller samples can be glued on top of a 100 mm dummy wafer. (Carrier wafer is recommended to have involatile masking layer i.e. Al2O3 for flourine chemstries)

Allowed Materials:

Si, GaN, InP, GaAs, photoresists, Al, Cr, Ge, Ti

Forbidden Materials:

Glasses, Noble metals (Au, Ag, Pt, Cu, Pd), Heavy metals (Cd, Pb, Zn), silicones

Tool name:
ICP-RIE Plasmalab 100
Area/room:
M2 F9 ALD
Category:
Dry etching
Manufacturer:
Oxford Instruments
Model:
Oxford Instruments Plasmalab System100 - ICP 180

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