Photoresist stabilization by combination of UV-exposure and temperature ramping prior to energetic plasma etching or ion-implantation.
Key Features and Accessories:
Substrate heating using a hot-plate. UV exposures in flash mode / low power / high lamp power. Cassette to cassette operation.
Hot-plate temperature control from 50 to 240 °C. UV lamp wavelength range 200 - 320 nm.
Silicon wafers. IC-compatible metals. Quartz wafers can be processed if coated with opaque materials.
Availability and Cost: