Picture of Wet Bench  RCA 1-2
Current status:
AVAILABLE
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1st Responsible:
2nd Responsible:
Process:
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Standard RCA cleaning of silicon wafers prior to oxidation or LPCVD.

Key Features and Accessories:

Temperature controlled baths (80°C) for RCA1 (NH4OH + H2O2) and RCA2 (HCl + H2O2). Room temperature HF dip. Separate automatic rinsers for each process bath.

Key Specifications:

Process bath temperature: 80°C

Substrate Size:

100 mm / 150 mm

Allowed Materials:

Clean silicon wafers going to oxidation or LPCVD.

Forbidden Materials:

Non-silicon materials. All metals. All non-cleanroom-compatible materials

Tool name:
Wet Bench RCA 1-2
Area/room:
M2 F7 Furnace
Category:
Wet Processes
Manufacturer:
Stangl
Model:
Acid

Instructors

Licensed Users

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