Standard RCA cleaning of silicon wafers prior to oxidation or LPCVD.
Key Features and Accessories:
Temperature controlled baths (80°C) for RCA1 (NH4OH + H2O2) and RCA2 (HCl + H2O2). Room temperature HF dip. Separate automatic rinsers for each process bath.
Process bath temperature: 80°C
100 mm / 150 mm
Clean silicon wafers going to oxidation or LPCVD.
Non-silicon materials. All metals. All non-cleanroom-compatible materials