Equipment for porous silicon formation by electrochemical etching of silicon. 100, 150, and 200 mm wafers can be processed using a different wafer holder. 150 mm SOI wafers can be used - holder with top contacts.
Both solid and wet-back contact configuration.
IC-compatible process (no metal contamination).
Etching current and voltage profile can be design using computer interface.
Max. current is 32 A.