Equipment for porous silicon formation by electrochemical etching of silicon. 100, 150, and 200 mm wafers can be processed using a different wafer holder. 150 mm SOI wafers can be used - holder with top contacts.

Both solid and wet-back contact configuration.

IC-compatible process (no metal contamination).

Etching current and voltage profile can be design using computer interface.

Max. current is 32 A.