Ultra-high vacuum electron beam evaporator for deposition of high-purity Al thin films (e.g. for tunnel junctions).

• Materials selections are limited to Ti and Al (at least initially)
• Specifically used for Al Josephson junction fabrication and high-purity Al deposition.
• 8-pocket linear source with large materials capacity
• 3 chambers separating sample loading, process, and source functions
• Ar gun for sample milling in the loading chamber
• Oxidation (static & dynamic) using either a needle valve or mass-flow controller in the process chamber (wide pressure range)
• UV light for surface treatment in the process chamber
• Fully automated operation with computer control (incl. sample transfer)
• Closed-loop control of the evaporation rate via emission current (about 20% precision)
• O₂ flow during evaporation (ONLY with separate main user permission and contact main user each time you use it!)
• Sample stage heating up to 700 °C using a special sample carrier (ONLY with separate main user permission!)
• Sample stage cooling with liquid nitrogen (ONLY with separate main user permission - NOT installed yet!)
• The evaporation rate is currently limited to 2 Å/s for most processes
• Allowed substrate materials:
  • Silicon
  • Sapphire
  • Glass
  • All other substrate types must be approved by the main users
• Allowed materials on substrate: 
  • Films of positive and negative optical and electron-beam photoresists
  • SiO₂, Si₃N₄, Al, Nb, NbN, Ti, NbTiN, TiN
  • Au, Pd (only for alignment marker purposes)
  • All other film types must be approved by the main users
• Prohibited materials, especially for Ar milling
  • In, Sb, Fe, Ni, Cr, Co, Zn, Se, ITO
  • All samples from the Angstrom system
  • All other film types must be approved by the main users