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TMAH Setup

Allowed Materials: Substrates: Silicon, silicon oxide, silicon nitride, glass

Evaporated metals: Al

Forbidden Materials: Plastics, photoresists

 

 

 

Tool name:
TMAH etch
Area/room:
M2 F12 Chemistry
Category:
Wet Processes
Manufacturer:
NN
Model:
NN

Key Specifications:

Temperature range 20 - 95oC
Temperature control ±0.5°C
Etch rate for silicon 0.5 μm/min (at 85oC)
Etch rate for Si oxide 1 nm/min (at 85oC)
Etch rate for Si nitride 0.017 nm/min (at 85oC)
Substrate amount up to 25 4” wafers

Substrate Size:

Up to 100mm (smaller pieces possible)

Instructors

Licensed Users

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