3 Tubes in LPCVD Stack:
- CVD3 (8"), for polysilicon
- CVD2 (6"), for silicon nitride [OUT OF USE]
- CVD1 (6"), for annealing
Year of Manufacture and Installation:
2008 / 2008
Deposition of B- or P-doped poly silicon, in low pressures. Samples up to 200mm can be processed. A semiautomated system with manual sample introduction. Deposition process is automated. Heating in 3 zones. Up to 70 wafers can be processed in one run. Open or closed boats.
Key Features and Accessories:
Available etch gases:H2, N2, DCS, SiH4, HCl, PH3, B2H6, BCl3. Operating temperature from +400 °C to +800 °C. Operating pressure 135 - 200 [mTorr].
||typical deposition rate
||22 [mΩ cm]
||2,4 [mΩ cm]
100mm, 150mm and 200mm wafers.
Substrates: Silicon, Silicon oxide
Substrates: III-V's, polymers.
Availability and Cost:
Availability Class: O (operator included)
Price Category: Separate agreement