Picture of LPCVD PolySi
Current status:
AVAILABLE
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1st Responsible:
2nd Responsible:
Process:
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3 Tubes in LPCVD Stack:

- CVD3 (8"), for polysilicon

- CVD2 (6"), for silicon nitride [OUT OF USE]

- CVD1 (6"), for annealing

CVD3:

Year of Manufacture and Installation:

2008 / 2008

Description:

Deposition of B- or P-doped poly silicon, in low pressures. Samples up to 200mm can be processed. A semiautomated system with manual sample introduction. Deposition process is automated. Heating in 3 zones. Up to 70 wafers can be processed in one run. Open or closed boats.

Key Features and Accessories:

Available etch gases:H2, N2, DCS, SiH4, HCl, PH3, B2H6, BCl3. Operating temperature from +400 °C to +800 °C. Operating pressure 135 - 200 [mTorr].

Key Specifications:

dopant typical deposition rate typical resistivity typical uniformity
p(B2H6) 20 [nm/min] 22 [mΩ cm] bad
p(BCl3) 20[nm/min] 2,4 [mΩ cm] very good

Substrate Size:

100mm, 150mm and 200mm wafers.

Allowed Materials:

Substrates: Silicon, Silicon oxide

Forbidden Materials:

Substrates: III-V's, polymers.

Availability and Cost:

Availability Class: O (operator included) 
Price Category: Separate agreement

Tool name:
LPCVD PolySi
Area/room:
M2 F7 Furnace
Category:
CVD & ALD
Manufacturer:
Centrotherm
Model:
Centrotherm

Instructors

Licensed Users

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