Picture of RTA
Current status:
AVAILABLE
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1st Responsible:
2nd Responsible:
Process:
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Key Specifications:

• Temperature range 200-1200°C
• N2, O2 (up to 800 C) annealing options
• Max annealing time 15s

Substrate Size: up to 200 mm dia. Small samples can be loaded on dummy wafer.

Allowed Materials: Si, some metals, oxides

Forbidden Materials:

Elements with the high vapor pressure at the room temperature (Pb,Zn,Cd, V-VI group), organic.

Tool name:
RTA
Area/room:
Lab 1020 MBE
Category:
Annealing
Manufacturer:
Russia
Model:
Foton-6

Instructors

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