• Temperature range 200-1200°C
• N2, O2 (up to 800 C) annealing options
• Max annealing time 15s
Substrate Size: up to 200 mm dia. Small samples can be loaded on dummy wafer.
Allowed Materials: Si, some metals, oxides
Elements with the high vapor pressure at the room temperature (Pb,Zn,Cd, V-VI group), organic.