Equipment is Poly Plasma Etcher with Graphite electrode. Gases connected are Ar, N2, O2 and SF6.
Key Features and Accessories:
Maximum RF Power (Top Electrode) is 1200 W, Electrode Gap is programmable 0.5-2.6 cm, pressure range is 300-600 mTorr, maximum gas flows are 200 sccm. Casette to casette automatic operation.
Equipment is used for descumming of patterned polymers, surface treatment for wetting (before plating), TiW etching, Poly Silicon etching and metal surface activation (to improve polymer adhesion).
150 mm dia
Substrates: Silicon, Quartz and Glass. Non transparent wafers only. Equipment is Non IC-clean.
Forbidden Materials: Au not allowed.
Availability and Cost:
Availability and cost: N