Description:

Equipment is Poly Plasma Etcher with Graphite electrode. Gases connected are Ar, N2, O2 and SF6.

Key Features and Accessories:

Maximum RF Power (Top Electrode) is 1200 W, Electrode Gap is programmable 0.5-2.6 cm, pressure range is 300-600 mTorr, maximum gas flows are 200 sccm. Casette to casette automatic operation.

Key Specifications:

Equipment is used for descumming of patterned polymers, surface treatment for wetting (before plating), TiW etching, Poly Silicon etching and metal surface activation (to improve polymer adhesion).

Substrate Size:

150 mm dia

Allowed Materials:

Substrates: Silicon, Quartz and Glass. Non transparent wafers only. Equipment is Non IC-clean.

Forbidden Materials: Au not allowed.

-

Availability and Cost:

Availability and cost: N