The tool is designed to etch mainly different qualities of silicon dioxide on 4”, 6” and 8”. The tool is also suitable for etching any etchable material with fluorine chemistry. Etch rate is mainly 300-500 nm/min for 4” and slightly lower for larger wafers. The uniformity over a wafer is usually ±1 %, but mask etch rate may very more over wafer. Repeatability has also proved good, as anticipated for high bias oxide etching.