Description:

Photoresist stabilization by combination of UV-exposure and temperature ramping prior to energetic plasma etching or ion-implantation.

Key Features and Accessories:

Substrate heating using a hot-plate. UV exposures in flash mode / low power / high lamp power. Cassette to cassette operation. 

Key Specifications:

Hot-plate temperature control from 50 to 240 °C. UV lamp wavelength range 200 - 320 nm.

Substrate Size:

150 mm

Allowed Materials:

Silicon wafers. IC-compatible metals. Quartz wafers can be processed if coated with opaque materials.

Forbidden Materials:

Non-IC materials

Availability and Cost:

Availability: O
Cost: Special