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ALD equipment is designed for deposition solid functional films of submicron thicknesses. In Micronova there are three ALD tools installed in cleanroom finger F9: two Beneq tools: ALD-2 for thermal ALD and ALD-4 for plasma-enhanced ALD / thermal ALD, and one Picosun tool: ALD-3 for both thermal and plasma-enhanced ALD. ALD-2 and ALD-4 are built on same frame but configuration and options are different. Micronova ALDs are mainly used to grow:

  • ICP-RIE etch stop layers (Al2O3)
  • Insulating layers (Al2O3, HfO2)
  • Passsivation layers (Al2O3)
  • Protective layers (Al2O3, TiO2)
  • High-k dielectrics (HfO2, ZrO2)
  • Optical thin film applications as filter structures (TiO2, Al2O3,ZnO, SiO2, Ta2O5)
  • Conductive transparent oxides: (ZnO, SnO2)
  • Conductive metal-like films (TiN, NbN)
  • Metallic films (Pt)
  • Rare-earth oxides (Er2O3, Yb2O3, Tm2O3, La2O3)
  • Transition metals oxides (WO3, TiO2)

Please check the specification and process details for each tool separately.



Key Features and Accessories:

  • Thermal ALD processes
  • Several interchangeable ALD reactors:
    • For single wafer, one side deposition.
    • For single wafer, double side deposition
    • For wafer batch, double side deposition (special)
    • For glass fibre (special)
  • Four liquid sources; the connected ones at this moment are: H2O, DEZ, TMA, TiCl4
  • Two heated sources; the connected ones at this moment are: TDMAH, TDMAZ
  • Two thermal gas sources: the connected one at this moment is O2/O3
  • Carrier gas: N2
  • Operating temperature: 40 to 350 °C
  • Substrate loading: manual directly to the reactor.
  • Maximum wafer size: 200 mm
  • Maximum total wafer thickness: 3 mm (20 mm in the enhanced height reactor 6)

Allowed Materials:

  • Semiconductors Si; GaN, InP
  • Polymers (such as SU-8, AZ-resists, PMMA); consider the melting point and decomposition temperature
  • Some metals such as (Al, Cr, Ge, Ti)
  • Quartz
  • Sapphire
  • Glasses (such as soda lime glass)
  • Zn is allowed only with a separate reactor for ZnO deposition (see PESO)

Forbidden Materials:

  • Noble metals (such as Au, Ag, Pt, Cu, Pd) 
  • Heavy metals (such as Cd, Pb, Hg, As) or their compounds
  • Fe, Co, Ni
  • Clean room incompatible materials (such as silicones, wood, paper etc.)

If the material is not mentioned above, additional approval from Aalto Nanofab is required.

Maximum allowed thickness of deposited layer per run: 200 nm. Everything exceeding this value requires an additional approval from the main users.

Tool name:
ALD Reactor ALD-2
Beneq TFS-500


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