License and training

When submitting for a training, please provide with the following process details (mandatory):

• Substrate material
• List of all the materials currently on the substrate (metals etc.)
• Film to be deposited (Al2O3, HfO2, …)
• Film thickness
• Process temperature
• One-sided or double-sided deposition

Description:

ALD equipments are designed to the oxide and nitride film deposition. In Micronova there is two ALD equipments (ALD1 (PEALD capable) and ALD2) in the clean room finger F9. The equipments are build on same frame but accessories are different. Both equipments are in common use. Micronova ALDs are mainly used to grow

• ICP-RIE etch stop layers (Al₂O₃)
• Insulating layers (Al₂O₃, HfO₂)
• Optical thin film applications as filter structures (TiO₂, Al₂O_3,ZnO)
• Novel materials and applications (Ta₂O₅,TiN,TaN, MoO₃) 
• Rare-earth oxides (Er₂O₃, Yb₂O₃, Tm₂O₃, La₂O₃)

Key Features and Accessories:

ALD2

• Liquid precursors: H₂O, TMA , TiCl₄, HfCl₄, DEZn, DMACl
• Solid precursors: TaCl₅, TDMAHf, La(TMHD)_3, Er(TMHD)_3, Yb(TMHD)_3, Tm(TMHD)_3, Mo(CO)₆
• Three precursor gases: NH₃, O₂ and O₃
• Nitrogen as the carrier gas
• Two heated precursor containers: HS-300
• Operating temperature from 20 to 350 °C.
• Water cooling

Key Specifications

• Maximum wafer size 200 mm
• Substrate Size:
• Sample size < 200 mm wafer. Also thicker samples can be coated up to 15 mm thickness with lifting ring.

Allowed Materials:

• Si
• Compound semiconductors (such as GaN, InP, GaAs)
• Polymers (such as SU-8, AZ-resists, PMMA)
• Some metals such as (Al, Cr, Ge, Ti) 
• Glasses (such as soda lime glass)

Forbidden Materials:

• Noble metals (such as Au, Ag, Pt, Cu, Pd) 
• Heavy metals (such as Cd, Pb, Zn)
• Clean room incompatible materials (such as silicones, wood, paper etc.)

Maximum allowed thickness of deposited layer per run: 200 nm. Everything exceeding this value requires a separate approval.