Standard RCA cleaning of silicon wafers prior to oxidation or LPCVD.

Key Features and Accessories:

Temperature controlled baths (80°C) for RCA1 (NH4OH + H2O2) and RCA2 (HCl + H2O2). Room temperature HF dip. Separate automatic rinsers for each process bath.

Key Specifications:

Process bath temperature: 80°C

Substrate Size:

100 mm / 150 mm

Allowed Materials:

Clean silicon wafers going to oxidation or LPCVD.

Forbidden Materials:

Non-silicon materials. All metals. All non-cleanroom-compatible materials