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ALD3 or metal-ALD is primarily intended for the deposition of metals and nitrides.

SPECIFICATIONS:

  • Automatic load-lock
  • Sample size: chips (with carrier wafer and holder) to 200 mm wafers
  • Plasma-capable: (ICP)
  • Processing temperature range: 80 - 500 Co
  • Diffusion enhancer: precursor is kept at an extended period in reactor space to allow diffusion; ideal for complicated 3D structure, ultra-high aspect ratios, only possible using thermal processes
  • Complex laminates: Software supports complex recipes.
  • Graded laminates: Software supports laminates with graded film thickness.

PROCESSES:

Metals:

  • Ru, Pt

Nitrides:

  • AlN, NbN, TiN

Oxides:

  • Al2O3, TiO2, HfO2
  • Er2O3, Yb2O3, Tm2O3

*Other processes can be made but lack development/material.

 

Tool name:
ALD Reactor ALD-3
Area/room:
M2 F9 ALD
Category:
CVD & ALD
Manufacturer:
Picosun
Model:
SUNALE R-200 Advanced

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