ALD3 or metal-ALD is primarily intended for the deposition of metals and nitrides.

SPECIFICATIONS:

• Automatic load-lock
• Sample size: chips (with carrier wafer and holder) to 200 mm wafers
• Plasma-capable: (ICP)
• Processing temperature range: 80 - 500 C^o
• Diffusion enhancer: precursor is kept at an extended period in reactor space to allow diffusion; ideal for complicated 3D structure, ultra-high aspect ratios, only possible using thermal processes
• Complex laminates: Software supports complex recipes.
• Graded laminates: Software supports laminates with graded film thickness.

PROCESSES:

Metals:

• Ru, Pt

Nitrides:

• AlN, NbN, TiN

Oxides:

• Al₂O₃, TiO₂, HfO₂
• Er₂O₃, Yb₂O₃, Tm₂O₃

*Other processes can be made but lack development/material.