Wafer stepper is used for exposure of 150 mm and 200 mm wafers. Resolution 0.35 μm, 5:1 reduction image, total field size on reticle 20 mm x 20 mm, alignment accuracy <100 nm (with Vernier patterns).
Exposure dose depends on resist type, thickness. Focus value depends on the desired slope angle.
More details can be found in ‘FPA-3000i4 - Standard Specification.pdf’ in folder ‘P:\Prosessilaitteet M1\(A) Lithography\A23 Wafer Stepper Canon i4\A. General information’