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Electron beam evaporator: used for high resolution nanofabrication with a special focus on depositing metal films (superconductors  and normal metals) for lift off techniques.

  • 6-pocket revolver-type electron beam evaporation source with limited choice of materials (Al, Ti, Ag, Cu), mainly for tunnel junction fabrication
  • Plasma gun for substrate cleaning / etching, can be run with Ar or O2. Gun use permitted with separate training and turbo pump only!
  • Oxidation with pure oxygen or oxygen/argon mixture up to 200 mbar in loading chamber
  • Minimum pump time before film deposition 1 hour
  • Crystal thickness monitor
  • Typical film thickness from 2 to 40 nm, maximum 100 nm, on special request up to 300 nm
  • Evaporation rate from 0.2 Å/s up to 5 Å/s
  • Substrate size from small pieces to 4" wafer (6" possible with a separate adapter jig); sample holder with manually adjustable tilt
  • Automated pump-down sequence, operating pressure down to 10-8 mbar range
Tool name:
Evaporator LISA
M2 S9
Instrumentti Mattila


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