Electron beam evaporator: used for high resolution nanofabrication with a special focus on depositing metal films (superconductors  and normal metals) for lift off techniques.

• 6-pocket revolver-type electron beam evaporation source with limited choice of materials (Al, Ti, Ag, Cu), mainly for tunnel junction fabrication
• Plasma gun for substrate cleaning / etching, can be run with Ar or O₂. Gun use permitted with separate training and turbo pump only!
• Oxidation with pure oxygen or oxygen/argon mixture up to 200 mbar in loading chamber
• Minimum pump time before film deposition 1 hour
• Crystal thickness monitor
• Typical film thickness from 2 to 40 nm, maximum 100 nm, on special request up to 300 nm
• Evaporation rate from 0.2 Å/s up to 5 Å/s
• Substrate size from small pieces to 4" wafer (6" possible with a separate adapter jig); sample holder with manually adjustable tilt
• Automated pump-down sequence, operating pressure down to 10^-8 mbar range