Picture of ICP-RIE Estrelas 100
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AVAILABLE
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Description

Description:

Inductively coupled plasma etcher for etching silicon with Bosch or cryogenic processes.

Key Features and Accessories:

  • Three power sources: ICP source 5 kW, HF source (13.56 MHz) 300 W (also low power can be controlled accurately by using an automatic x0.1 attenuator), LF (350 kHz) 300 W.
  • Available etch gases: SF6 (two lines for low and high flow), C4F8, O2, Ar, CHF3
  • Operating temperature with cryo from -150 °C to +110 °C and with chiller from 0 °C to +60 °C.

Substrate Size:

Wafer clamps exists in the following sizes: 100 mm, 150 mm, 200 mm, 156x156 mm2. Small samples need to be glued on a protected carrier wafer with e.g. photoresist. All kinds of tapes are forbidden! Al2O3 is a good masking material for the carrier.

Allowed Materials:

Si, Ge, Mo, Nb, W (and their oxides and nitrides), Al2O3, photoresists, (TiN as an etch stop layer)

Forbidden Materials:

All other materials (including Al, Ti, Ni, Cr). These metals are not allowed since they create non-volatile by-products with fluorine, which are deposited on the chamber walls. No tapes allowed in any Nanofab vacuum equipment.

Important for License application:

When submitting for a training, please provide with the following process details (mandatory):

    Substrate material
    Wafer size (4", 6", 8")
    Etch process type (cryo, Bosch)
    Approximate etch depth
    Process temperature
    Mask material
    List of all the materials currently on the substrate (metals etc.)

Details
Tool name:
ICP-RIE Estrelas 100
Area/room:
M2 F10 Plasma
Category:
Dry etching
Manufacturer:
Oxford Instruments
Model:
PlasmaPro 100 Estrelas
Process info 
CLAMP: 6"
COOLING / PROCESS: LN2 / Cryo (updated on November 15, 2024 by EM).
The tool is in cryo mode as default and Bosch seasons are arranged on request from the main users
***************************************************************************************
Please contact Eppu Rusokallio for LN2 tank refill:
eppu.rusokallio@aalto.fi
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TENTATIVE SCHEDULE:
26.11.2024 - switch to 8", Cryo
16.12.2024 - switch to 4" Cryo
14.01.2025 - switch to 8" Cryo
21.01.2025 - switch to 6" Cryo
25.02.2025 - switch to 4" Cryo
***************************************************************************************
IMPORTANT INFORMATION FOR USERS:
***
WARNING: The size of the wafer loaded should be exactly the same as the clamp installed (4", 6" or 8"). Information of the clamp/mode is indicated in PESO header, LIMS or on the wall nearby the tool's load lock. Loading of a wafer with a wrong size can result in serious damages.
***
WARNING: Before loading of a wafer, make sure the back side of the wafer is absolutely clean and does not contain any traces of photoresist, adhesives, drops of water or other liquids. Failure to follow this requirement will result the wafer to be glued to the table causing the loading mechanisms to fail and eventually wafers to be broken inside the process chamber!
***
WARNING: The minimum wafer thickness allowed for loading is 300 micron for 4" and 6" wafers. Whatever is thinner than that should be attached to a clean brand new standard silicon wafer with photoresist or Crystalbond 555. Users are responsible for gluing of chips to carrier wafers to guarantee the samples are secured and there is no risk of ungluing during operation. It is not allowed to use any customized jigs or holders, as well as prepare any kinds of jigs or holders using the tool.
***
WARNING: Make sure the etching depth and etching time are adequate to avoid any any risk of etching wafer through and damage the etching table. User etch-stop layers. Consider the mask material, thickness and its etching rate (selectivity). In case etching through the whole wafer is needed, using a carrier wafer is mandatory.
***
When etching a large areas first consult with the main users.
***
WARNING: The helium backing pressure is subject to set depending on wafer thickness; too high pressure might result in breaking of wafer during etching.
General starting recommendations for helium backing pressure settings:
- 4" wafer (550 micron): 10 Torr
- 6" wafer (675 micron): 7 Torr
- 8" wafer (750 micron): 5 Torr
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