Inductively coupled plasma etcher for etching silicon with Bosch or cryogenic processes.
Key Features and Accessories:
- Three power sources: ICP source 5 kW, HF source (13.56 MHz) 300 W (also low power can be controlled accurately by using an automatic x0.1 attenuator), LF (350 kHz) 300 W.
- Available etch gases: SF6 (two lines for low and high flow), C4F8, O2, Ar, CHF3
- Operating temperature with cryo from -150 °C to +110 °C and with chiller from 0 °C to +60 °C.
Wafer clamps exists in the following sizes: 100 mm, 150 mm, 200 mm, 156x156 mm2. Small samples need to be glued on a protected carrier wafer with e.g. photoresist. All kinds of tapes are forbidden! Al2O3 is a good masking material for the carrier.
Si, Ge, Mo, Nb, W (and their oxides and nitrides), Al2O3, photoresists, (TiN as an etch stop layer)
All other materials (including Al, Ti, Ni, Cr). These metals are not allowed since they create non-volatile by-products with fluorine, which are deposited on the chamber walls. No tapes allowed in any Nanofab vacuum equipment.
Important for License application:
When submitting for a training, please provide with the following process details (mandatory):
Wafer size (4", 6", 8")
Etch process type (cryo, Bosch)
Approximate etch depth
List of all the materials currently on the substrate (metals etc.)