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Inductively coupled plasma etcher for etching silicon with Bosch or cryogenic processes.

Key Features and Accessories:

  • Three power sources: ICP source 5 kW, HF source (13.56 MHz) 300 W (also low power can be controlled accurately by using an automatic x0.1 attenuator), LF (350 kHz) 300 W.
  • Available etch gases: SF6 (two lines for low and high flow), C4F8, O2, Ar, CHF3
  • Operating temperature with cryo from -150 °C to +110 °C and with chiller from 0 °C to +60 °C.

Substrate Size:

Wafer clamps exists in the following sizes: 100 mm, 150 mm, 200 mm, 156x156 mm2. Small samples need to be glued on a protected carrier wafer with e.g. photoresist. All kinds of tapes are forbidden! Al2O3 is a good masking material for the carrier.

Allowed Materials:

Si, Ge, Mo, Nb, W (and their oxides and nitrides), Al2O3, photoresists, (TiN as an etch stop layer)

Forbidden Materials:

All other materials (including Al, Ti, Ni, Cr). These metals are not allowed since they create non-volatile by-products with fluorine, which are deposited on the chamber walls. No tapes allowed in any Nanofab vacuum equipment.

Important for License application:

When submitting for a training, please provide with the following process details (mandatory):

    Substrate material
    Wafer size (4", 6", 8")
    Etch process type (cryo, Bosch)
    Approximate etch depth
    Process temperature
    Mask material
    List of all the materials currently on the substrate (metals etc.)

Tool name:
ICP-RIE Estrelas 100
M2 F10 Plasma
Dry etching
Oxford Instruments
PlasmaPro 100 Estrelas
COOLING / PROCESS: Cryo / LN2 (updated on June 17, 2024 by EM).
The tool is in cryo mode as default and Bosch seasons are arranged on request from the main users
Please contact Ilari Kallio for LN2 tank refill:
01.08.2024 - switch to 6" Cryo mode
03.09.2024 - switch to 4" Cryo mode
01.10.2024 - switch to 6" Cryo mode
There has been more than one occasion of incorrect wafer size loaded to the tool.This will cause failure to unload sample which requires at least a half day of maintenance. Please double check that the wafer you are using is EXACTLY the same size than the label next to the tool indicates (on the wall at the load lock, PESO and LIMS systems).
Do not load any wafers that have any resist on the back side of the wafer. If you want to use such wafers this must be discussed with main users separately. The stickiness of the resist will stuck the wafer to the table causing the loading mechanisms to fail and eventually wafers to be broken inside the process chamber!
General starting recommendations for helium backing pressure settings:
- 4" wafer (550 micron): 10 Torr
- 6" wafer (675 micron): 7 Torr
- 8" wafer (750 micron): 5 Torr


Licensed Users

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