TMAH Setup
Allowed Materials: Substrates: Silicon, silicon oxide, silicon nitride, glass
Metallized wafers are not allowed!
Key Specifications:
Temperature range 20 - 85°C Temperature control ±0.5°C Etch rate for silicon 0.5 μm/min (at 85°C) Etch rate for Si oxide 1 nm/min (at 85°C) Etch rate for Si nitride 0.017 nm/min (at 85°C) Substrate amount up to 25 4” wafers
Substrate Size:
Up to 150 mm (smaller pieces possible)