Maskless lithography tool for rapid prototyping and small production volumes. Use of the system is straightfowrard, and the software is very user-friendly; training typically takes only 1.5 hrs. Dedicated conversion software can import mask designs from gdsii (preferred), dxf, cif, or bmp files. Exposure modes: direct exposure of one of more layers (with alignment), dose and defocus series, or draw mode for CADless exposures.
Diode Lasers: 8 W at 405 nm and 2.8 W at 375 nm
Exposure time for 4" wafer: ~9 mins with 405 nm laser, ~20 mins with 375 nm laser.
Real-time autofocus: pneumatic or optical
Automated front- or back-side alignment
Sample sizes: from 5 x 5 mm2 up to 8-inch wafers and masks. Maximum thickness 11 mm.
Up to 200 x 200 mm2 exposure area
Nominal resolution (line-space pattern) 1.2 μm