The SI 500 plasma system enables the proportional transfer of mask structures into Silicon and further semiconductor materials. A large variety of substrates from wafers up to 200 mm in diameter to parts loaded on carriers can be processed in the SI 500 ICP etcher. The ICP substrate electrode with dynamic temperature control in combination with Helium backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from –20 °C up to +250 °C