Picture of Metal etcher SI 500
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Description

The SI 500 plasma system enables the proportional transfer of mask structures into Silicon and further semiconductor materials. A large variety of substrates from wafers up to 200 mm in diameter to parts loaded on carriers can be processed in the SI 500 ICP etcher. The ICP substrate electrode with dynamic temperature control in combination with Helium backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from –20 °C up to +250 °C

Details
Tool name:
Metal etcher SI 500
Area/room:
[Not defined]
Category:
Dry etching
Manufacturer:
Sentech
Model:
SI 500
Process info
  • ???????Materials that are allowed at Sentech Chamber 1 (metal chamber) for now:
  • ZrOx, HfOx, AlOx, ITO, TiN, C class metals and ScAlN
  • Forbidden Materials:
  • Noble metals (Au, Ag, Pt, Cu, Pd), Heavy metals (Cd, Pb, Zn), silicones, Li, Y, Fe, Co, Ni, Cr
  • (Note that Class D wafers with Cu, Au and Pt are allowed but etching those layers with plasma is forbidden: use IBE instead.)
  • Monitoring of tool stability is underway and may eventually be used to admit more materials.
  • ------------------------------------------------------------------------------------------------------------------
  • After you have completed your etching for the day:
  • 1) Ensure that the chiller temperature is set to 20C
  • *****************************************************
  • 2) Run chamber clean flowrecipe from the "Wafer Handling" window:
  • Recipe name: "Metal Chamber Short Clean 5min" = "for Normal Clean" For etching non-chemistry switching, a short chamber clean, after etching <3 wafers (5 min).
  • Recipe name: "Metal Chamber Longer Clean 10min" = "for Special Clean" For switch the chemistry after the process, long chamber cleaning, after etching >3 wafers (10min) .
  • *******************************************************
  • You may leave the chamber with this dummy wafer in place.
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