Picture of Oxide etcher SI 500
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Description

The SI 500 plasma system enables the proportional transfer of mask structures into Silicon and further semiconductor materials. A large variety of substrates from wafers up to 200 mm in diameter to parts loaded on carriers can be processed in the SI 500 ICP etcher. The ICP substrate electrode with dynamic temperature control in combination with Helium backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from –20 °C up to +250 °C

Details
Tool name:
Oxide etcher SI 500
Area/room:
[Not defined]
Category:
Dry etching
Manufacturer:
Sentech
Model:
SI 500
Process info
  • ???????Materials that are allowed at Sentech Chamber 2 (Oxide chamber) for now:
  • Si, SiOx, SiNx, TiN, TiW, Ti, W, Mo, Resist, Graphene???
  • ---------------------------------------------------------------------------------------------
  • After you have completed your etching for the day:
  • 1) Ensure that the chiller temperature is set to 20C
  • *****************************************************
  • 2) Run chamber clean flowrecipe from the "Wafer Handling" window:
  • Recipe name: "Oxide Chamber Short Clean 5min" = "for Normal clean" For etching non-chemistry switching, a short chamber clean (5 min).
  • Recipe name: "Oxide Chamber Long Clean 10min" = "for Special Clean" switch the chemistry after the process, long chamber cleaning (10min).
  • *******************************************************
  • You may leave the chamber with this dummy wafer in place.
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