The Scia Mill 200 Basic is designed for highly uniform ion beam etching of wafers up to 200 mm. The system is equipped with a circular broad beam ion source with a diameter of 362 mm. The source operates with inert gases (Ion Beam Etching) as well as with reactive gases (Reactive or Chemically Assisted Ion Beam Etching). The substrates will be mounted on a tiltable and rotatable substrate holder, which enables effective substrate cooling as well as substrate heating. A typical application is structuring of complex multilayers of metallic and dielectric materials. Hence, an optical end point detection system is integrated for recognition of etched species and to apply defined etch stops.