3 Tubes in LPCVD Stack:
- CVD3 (8"), for polysilicon
- CVD2 (6"), for silicon nitride [OUT OF USE]
- CVD1 (6"), for annealing
CVD3:
Year of Manufacture and Installation:
2008 / 2008
Description:
Deposition of B- or P-doped poly silicon, in low pressures. Samples up to 200mm can be processed. A semiautomated system with manual sample introduction. Deposition process is automated. Heating in 3 zones. Up to 70 wafers can be processed in one run. Open or closed boats.
Key Features and Accessories:
Available gases:H2, N2, DCS, SiH4, HCl, PH3, B2H6, BCl3. Operating temperature from +400 °C to +800 °C. Operating pressure 135 - 200 [mTorr].
Key Specifications:
| dopant |
typical deposition rate |
typical resistivity |
typical uniformity |
| p(B2H6) |
20 [nm/min] |
22 [mΩ cm] |
bad |
| p(BCl3) |
20[nm/min] |
2,4 [mΩ cm] |
very good |
Substrate Size:
100mm, 150mm and 200mm wafers.
Allowed Materials:
Substrates: Silicon, Silicon oxide
Forbidden Materials:
Substrates: III-V's, polymers.
Availability and Cost:
Availability Class: O (operator included)
Price Category: Separate agreement